[Mediapen=Lee Dong-eun] SK Hynix announced the development of HBM2E DRAM product which has the industry’s highest bandwidth. Compared to the previous HBM2, the new product boasts 50% higher bandwidth and 100% additional capacity.

SK Hynix’s HBM2E supports over 460GB per second bandwidth based on the 3.6Gbps speed performance per pin with 1024 data I/Os(Inputs/Outputs). Through utilization of the TSV (Through Silicon Via) technology, a maximum of eight 16-gigabit chips are vertically stacked, forming a single, dense package of 16GB data capacity.

 

As technologies advance, high-end GPU, supercomputers, machine learning and artificial intelligence systems require maximum level of memory performance. SK Hynix’s HBM2E is the optimal memory solution for it is interconnected closely to processors and allows faster data transfer.

“SK Hynix has established its technological leadership since its world’s first HBM release in 2013,” said Jun-Hyun Chun, Head of HBM Business Strategy. “SK Hynix will begin mass production in 2020, when the HBM2E market is expected to open up, and continue to strengthen its leadership in the premium DRAM market.”